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ISC012N04LM6ATMA1
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100% new and original products
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Product Details
Description | MOSFET N-CH 40V 17A TDSON |
---|---|
Detailed Description | Detailed DescriptionN-Channel 40 V 17A (Ta), 49A (Tc), 59A (Tc) 3W (Ta), 38W (Tc) Surface Mount PG-TDSON-8-6 |
Product Attributes
Product Attribute | Attribute Value |
Manufacturer: | Infineon |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | TDSON-FL-8 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds – Drain-Source Breakdown Voltage: | 40 V |
Id – Continuous Drain Current: | 238 A |
Rds On – Drain-Source Resistance: | 1.2 mOhms |
Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage: | 2.3 V |
Qg – Gate Charge: | 25 nC |
Minimum Operating Temperature: | – 55 C |
Maximum Operating Temperature: | + 175 C |
Pd – Power Dissipation: | 125 W |
Channel Mode: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | Infineon Technologies |
Product Type: | MOSFET |
Factory Pack Quantity: | 5000 |
Subcategory: | MOSFETs |
Part # Aliases: | ISC012N04LM6 SP005559102 |
Product Information
The ISC012N04LM6ATMA1 is a high-performance power MOSFET designed for use in a wide range of applications. With a maximum drain-source voltage of 40V and a continuous drain current of 120A, this MOSFET is capable of handling high power loads with ease. It features a low on-resistance of 1.2mΩ, making it highly efficient and ideal for use in high-frequency switching applications. The ISC012N04LM6ATMA1 is housed in a compact TO-220 package, making it easy to integrate into your designs.
Additional Info
Attribute | Description |
---|---|
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | AR99 |
HTSUS | 8541.29.0095 |
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