Product AttributeAttribute Value
Product Category:RF JFET Transistors
Shipping Restrictions: This product may require additional documentation to export from the United States.
Transistor Type:HEMT
Operating Frequency:2.9 GHz to 3.5 GHz
Gain:11 dB
Transistor Polarity:N-Channel
Vds – Drain-Source Breakdown Voltage:125 V
Vgs – Gate-Source Breakdown Voltage:– 10 V, 2 V
Id – Continuous Drain Current:24 A
Output Power:400 W
Minimum Operating Temperature:– 40 C
Maximum Operating Temperature:+ 125 C
Mounting Style:Flange Mount
Package / Case:440225
Product Type:RF JFET Transistors
Factory Pack Quantity:1
Vgs th – Gate-Source Threshold Voltage:3 V


Additional Details

Product Compliance

USHTS: 8541290075

ECCN: 3A001.b.3

More Information

CGHV35400F 400W 50Ω I/O Matched GaN HEMT
Wolfspeed CGHV35400F 400W 2.9GHz to a few.5GHz, 50Ω I/O Matched GaN HEMT for S-Band radar amplifier programs offers excessive efficiency, excessive advantage, and giant bandwidth competencies. The CGHV35400F transistor is matched to 50Ω on the enter and 50ohms at the output.