CGHV35400F1
CGHV35400F1
Categories: Semiconductors, Wireless & RF Semiconductors
$521.86
Note:
Price can vary and may be different depends on market and demand.
| Product Attribute | Attribute Value |
| Manufacturer: | Wolfspeed |
| Product Category: | RF JFET Transistors |
| Shipping Restrictions: | This product may require additional documentation to export from the United States. |
| Transistor Type: | HEMT |
| Technology: | GaN |
| Operating Frequency: | 2.9 GHz to 3.5 GHz |
| Gain: | 11 dB |
| Transistor Polarity: | N-Channel |
| Vds – Drain-Source Breakdown Voltage: | 125 V |
| Vgs – Gate-Source Breakdown Voltage: | – 10 V, 2 V |
| Id – Continuous Drain Current: | 24 A |
| Output Power: | 400 W |
| Minimum Operating Temperature: | – 40 C |
| Maximum Operating Temperature: | + 125 C |
| Mounting Style: | Flange Mount |
| Package / Case: | 440225 |
| Brand: | Wolfspeed |
| Product Type: | RF JFET Transistors |
| Factory Pack Quantity: | 1 |
| Subcategory: | Transistors |
| Vgs th – Gate-Source Threshold Voltage: | 3 V |
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Additional Details
Product Compliance
USHTS: 8541290075
ECCN: 3A001.b.3
More Information
CGHV35400F 400W 50Ω I/O Matched GaN HEMT
Wolfspeed CGHV35400F 400W 2.9GHz to a few.5GHz, 50Ω I/O Matched GaN HEMT for S-Band radar amplifier programs offers excessive efficiency, excessive advantage, and giant bandwidth competencies. The CGHV35400F transistor is matched to 50Ω on the enter and 50ohms at the output.