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Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds – Drain-Source Breakdown Voltage:
600 V
Id – Continuous Drain Current:
50 A
Rds On – Drain-Source Resistance:
10 mOhms
Vgs – Gate-Source Voltage:
– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:
4.5 V
Qg – Gate Charge:
318 nC
Minimum Operating Temperature:
– 55 C
Maximum Operating Temperature:
+ 150 C
Pd – Power Dissipation:
694 W
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Brand:
Infineon Technologies
Product Type:
MOSFET
Factory Pack Quantity:
750
Subcategory:
MOSFETs
Part # Aliases:
IPDQ60R010S7A SP002063384
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Additional Details
Product Compliance
USHTS: 8541290095
CNHTS: 8541290000
TARIC: 8541290000
ECCN: EAR99
More Information
600V CoolMOS™ SJ S7A Power Device
Infineon Technologies 600V CoolMOS™ SJ S7A Power Device is a high voltage electricity MOSFET, designed as a static transfer. The device become designed in line with the Infineon Technologies’ remarkable-junction (SJ) principle. It combines the revel in of the main SJ MOSFET provider with high-class innovation for low RDS(on) in a QDPAK bundle. The S7A collection is optimized for low-frequency switching and excessive modern packages like circuit breakers.
