Product Attribute Attribute Value
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 50 A
Rds On – Drain-Source Resistance: 10 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 4.5 V
Qg – Gate Charge: 318 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 694 W
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Brand: Infineon Technologies
Product Type: MOSFET
Factory Pack Quantity: 750
Subcategory: MOSFETs
Part # Aliases: IPDQ60R010S7A SP002063384


Additional Details

Product Compliance

USHTS: 8541290095

CNHTS: 8541290000

TARIC: 8541290000


More Information

600V CoolMOS™ SJ S7A Power Device
Infineon Technologies 600V CoolMOS™ SJ S7A Power Device is a high voltage electricity MOSFET, designed as a static transfer. The device become designed in line with the Infineon Technologies’ remarkable-junction (SJ) principle. It combines the revel in of the main SJ MOSFET provider with high-class innovation for low RDS(on) in a QDPAK bundle. The S7A collection is optimized for low-frequency switching and excessive modern packages like circuit breakers.