ISC012N04LM6ATMA1
ISC012N04LM6ATMA1
Categories: Discrete Semiconductors, Semiconductors
$2.40
Note:
Price can vary and may be different depends on market and demand.
| Product Attribute | Attribute Value |
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-FL-8 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 40 V |
| Id – Continuous Drain Current: | 238 A |
| Rds On – Drain-Source Resistance: | 1.2 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 2.3 V |
| Qg – Gate Charge: | 25 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd – Power Dissipation: | 125 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Infineon Technologies |
| Product Type: | MOSFET |
| Factory Pack Quantity: | 5000 |
| Subcategory: | MOSFETs |
| Part # Aliases: | ISC012N04LM6 SP005559102 |
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Additional Details
Product Compliance
USHTS: 8541290095
TARIC: 8541290000
ECCN: EAR99
More Information
OptiMOS™ 6 Power MOSFETs
Infineon Technologies OptiMOS™ 6 Power MOSFETs provide next generation, modern-day innovation, and exceptional-in-magnificence overall performance. The OptiMOS 6 circle of relatives utilizes thin wafer generation that permits significant overall performance benefits. Compared to alternative merchandise, the OptiMOS 6 Power MOSFETs have a reduced RDS(ON) of 30% and are optimized for synchronous rectification.