ISC012N04LM6ATMA1

$2.40

Product Attribute Attribute Value
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-FL-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 40 V
Id – Continuous Drain Current: 238 A
Rds On – Drain-Source Resistance: 1.2 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.3 V
Qg – Gate Charge: 25 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 125 W
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Brand: Infineon Technologies
Product Type: MOSFET
Factory Pack Quantity: 5000
Subcategory: MOSFETs
Part # Aliases: ISC012N04LM6 SP005559102

 

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    Additional Details

    Product Compliance

    USHTS: 8541290095

    TARIC: 8541290000

    ECCN: EAR99

    More Information

    OptiMOS™ 6 Power MOSFETs
    Infineon Technologies OptiMOS™ 6 Power MOSFETs provide next generation, modern-day innovation, and exceptional-in-magnificence overall performance. The OptiMOS 6 circle of relatives utilizes thin wafer generation that permits significant overall performance benefits. Compared to alternative merchandise, the OptiMOS 6 Power MOSFETs have a reduced RDS(ON) of 30% and are optimized for synchronous rectification.