ISZ0703NLSATMA1
ISZ0703NLSATMA1
Categories: Discrete Semiconductors, Semiconductors
$1.02
Note:
Price can vary and may be different depends on market and demand.
Product Attribute | Attribute Value |
Manufacturer: | Infineon |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | SMD/SMT |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds – Drain-Source Breakdown Voltage: | 60 V |
Id – Continuous Drain Current: | 56 A |
Rds On – Drain-Source Resistance: | 7.3 mOhms |
Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage: | 2.3 V |
Qg – Gate Charge: | 8.7 nC |
Minimum Operating Temperature: | – 55 C |
Maximum Operating Temperature: | + 175 C |
Pd – Power Dissipation: | 44 W |
Channel Mode: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | Infineon Technologies |
Product Type: | MOSFET |
Factory Pack Quantity: | 5000 |
Subcategory: | MOSFETs |
Part # Aliases: | ISZ0703NLS SP005417432 |
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Additional Details
Product Compliance
USHTS: 8541290095
CNHTS: 8541290000
TARIC: 8541290000
ECCN: EAR99